| PART |
Description |
Maker |
| CGH21240F CGH21240F-TB |
S BAND, GaN, N-CHANNEL, RF POWER, HEMFET ROHS COMPLIANT, CERAMIC PACKAGE-2
|
Cree, Inc.
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| QPB1500 QPB1500S2 QPB1500PCB4B01 |
Ku-Band 25 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGM2635-CP |
X-Band 100 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| ECE-V1HA101UP RF3933TR7 EEV-TG2A101M ERJ-8GEYJ100V |
90W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| CGHV14250-TB CGHV14250F CGHV14250F-AMP CGHV14250P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| CD410860 |
Dual Diode POW-R-BLOK?Modules 60 Amperes/800 Volts
Dual Diode POW-R-BLOK Modules 60 Amperes/800 Volts
Dual Diode POW-R-BLOK⑩ Modules 60 Amperes/800 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| CM530820 |
Dual SCR POW-R-BLOK Modules 200 Amperes/800 Volts
Dual SCR POW-R-BLOK⑩ Modules 200 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
